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this is information on a product in full production. march 2012 doc id 018898 rev 2 1/25 25 stb2n62k3, std2n62k3, stf2n62k3, STP2N62K3, stu2n62k3 n-channel 620 v, 3 , 2.2 a supermesh3? power mosfet in d2pak, dpak, to-220fp, to-220 and ipak packages datasheet ? production data features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected applications switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max i d p tot stb2n62k3 std2n62k3 620 v < 3.6 2.2 a 45 w stf2n62k3 20 w STP2N62K3 stu2n62k3 45 w 3 2 1 1 2 3 dpak ipak to-220 to-220fp 1 3 tab 1 2 3 ta b d2pak 1 3 ta b d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stb2n62k3 std2n62k3 2n62k3 d2pak dpak tape and reel stf2n62k3 STP2N62K3 stu2n62k3 2n62k3 to-220fp t0-220 ipak tu b e www.st.com
contents stb/d/f/p/u2n62k3 2/25 doc id 018898 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
stb/d/f/p/u2n62k3 electrical ratings doc id 018898 rev 2 3/25 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak, dpak, to-220, ipak to-220fp v ds drain-source voltage 620 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 2.2 2.2 (1) 1. limited by maximum junction temperature a i d drain current (continuous) at t c = 100 c 1 1 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 8.8 8.8 (1) a p tot total dissipation at t c = 25 c 45 20 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 2.2 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 85 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 2.2 a, di/dt 400 a/s,v ds peak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 12 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d2pak dpak ipak to-220 to-220fp r thj-case thermal resistance junction-case max 2.78 6.25 c/w r thj-pcb thermal resistance junction-pcb max 30 50 c/w r thj-amb thermal resistance junction- ambient max 100 62.5 c/w
electrical characteristics stb/d/f/p/u2n62k3 4/25 doc id 018898 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 620 v i dss zero gate voltage drain current (v gs = 0) v ds = 620 v v ds = 620 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on-resistance v gs = 10 v, i d = 1.1 a 3 3.6 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 340 26 4 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 496 v, v gs = 0 - 17 - pf r g intrinsic gate resistance f = 1 mhz open drain - 5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 496 v, i d = 1.1 a, v gs = 10 v (see figure 20 ) - 15 3 9 - nc nc nc
stb/d/f/p/u2n62k3 electrical characteristics doc id 018898 rev 2 5/25 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 310 v, i d = 1.1 a, r g = 4.7 , v gs = 10 v (see figure 19 ) - 8 4.4 21 22 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 2.2 8.8 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 2.2 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.2 a, di/dt = 100 a/s v dd = 60 v (see figure 24 ) - 200 900 9 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.2 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 24 ) - 240 1150 10 ns nc a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 v
electrical characteristics stb/d/f/p/u2n62k3 6/25 doc id 018898 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-220 and d2pak figure 7. thermal impedance for to-220 and d2pak i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am091 8 1v1 i d 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am091 8 2v1 i d 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 10 am091 83 v1
stb/d/f/p/u2n62k3 electrical characteristics doc id 018898 rev 2 7/25 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 3 2 1 0 0 10 v d s (v) 20 (a) 5 15 25 4 5 5v 6v 7v v g s =10v am091 8 4v1 i d 1.5 1.0 0.5 0 0 4 v g s (v) 8 (a) 2 6 2.0 2.5 3 .0 3 .5 v d s =15v 1 5 3 7 9 am00 88 9v1 v g s 6 4 2 0 0 5 q g (nc) (v) 8 10 15 10 v dd =496v i d =2.2a 12 3 00 200 100 0 400 500 v d s am091 8 6v1 r d s (on) 3 .0 2.9 2. 8 2.7 0 1.0 i d (a) ( ) 0.5 1.5 3 .1 3 .2 3 . 3 v g s =10v 2.0 am091 8 7v1 c 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am091 88 v1 e o ss 0.5 0 0 100 v d s (v) ( j) 400 1.0 200 3 00 2.0 500 600 2.5 am091 8 9v1
electrical characteristics stb/d/f/p/u2n62k3 8/25 doc id 018898 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. maximum avalanche energy vs starting tj v g s (th) 1.00 0.95 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 1.05 0.90 0. 8 5 0.75 i d =50 a am09190v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 0 2.5 i d =1.1a v g s =10v am09191v1 v s d 0 2 i s d (a) (v) 1 5 3 4 0 0.1 0.2 0. 3 0.4 0.5 0.6 t j =-50c t j =150c t j =25c 0.7 0. 8 0.9 am0919 3 v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 i d =1ma am09192v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 10 20 3 0 40 120 140 8 0 90 i d =2.2 a v dd =50 v 50 60 70 am091 8 0v1
stb/d/f/p/u2n62k3 test circuits doc id 018898 rev 2 9/25 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stb/d/f/p/u2n62k3 10/25 doc id 018898 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stb/d/f/p/u2n62k3 package mechanical data doc id 018898 rev 2 11/25 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb/d/f/p/u2n62k3 12/25 doc id 018898 rev 2 figure 25. d2pak (to-263) drawing figure 26. d2pak footprint (a) a. all dimensions are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
stb/d/f/p/u2n62k3 package mechanical data doc id 018898 rev 2 13/25 table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data stb/d/f/p/u2n62k3 14/25 doc id 018898 rev 2 figure 27. dpak (to-252) drawing figure 28. dpak footprint (b) b. all dimensions are in millimeters 006 8 772_h 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
stb/d/f/p/u2n62k3 package mechanical data doc id 018898 rev 2 15/25 table 11. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stb/d/f/p/u2n62k3 16/25 doc id 018898 rev 2 figure 29. to-220fp drawing 7012510_rev_k_b
stb/d/f/p/u2n62k3 package mechanical data doc id 018898 rev 2 17/25 table 12. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stb/d/f/p/u2n62k3 18/25 doc id 018898 rev 2 figure 30. to-220 type a drawing 00159 88 _typea_rev_ s
stb/d/f/p/u2n62k3 package mechanical data doc id 018898 rev 2 19/25 table 13. ipak (to-251) mechanical data dim. mm. min. typ max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.3 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e2.28 e1 4.40 4.60 h16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10 o
package mechanical data stb/d/f/p/u2n62k3 20/25 doc id 018898 rev 2 figure 31. ipak (to-251) drawing 006 8 771_h am09214v1
stb/d/f/p/u2n62k3 packaging mechanical data doc id 018898 rev 2 21/25 5 packaging mechanical data table 14. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data stb/d/f/p/u2n62k3 22/25 doc id 018898 rev 2 table 15. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
stb/d/f/p/u2n62k3 packaging mechanical data doc id 018898 rev 2 23/25 figure 32. tape for dpak (to-252) and d2pak (to-263) figure 33. reel for dpak (to-252) and d2pak (to-263) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history stb/d/f/p/u2n62k3 24/25 doc id 018898 rev 2 6 revision history table 16. document revision history date revision changes 31-may-2011 1 first release 20-mar-2012 2 added new package: d2pak ? table 1: device summary , section 4: package mechanical data and section 5: packaging mechanical data have been modified. minor text changes.
stb/d/f/p/u2n62k3 doc id 018898 rev 2 25/25 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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